* Library of Polyfet RF Devices rf MOSFETs * $Revision: 1.10 $ * $Author: rperez $ * $Date: 30 Nov 1998 15:24:20 $ *--------------------------------------------------------------- *$ *POLYFET RF DEVICES *FEB 15TH 1994 *PHONE:(805)484-4210; FAX:(805)494-3393 CONTACT:MR. S.K. LEONG *HIGH POWER, HIGH FREQUENCY, RF N-CHANNEL VERTICAL DMOS MOSFET *TO GENERATE S PARAMETER MATCHING DATA SHEET, SET VG=3.63V FOR IDQ=200MA *MODEL APPLICABLE FOR ALL F1B 1 DIE IN AP, AK, AQ AND CC PACKAGE. * NOTE:- HP/EESOF USES 'GATE DRAIN SOURCE' ORDER * ( ;D G S ) .SUBCKT F1007/PF 20 10 30 LG 10 11 1.71n RGATE 11 12 0.78 CG 10 30 0.05P CRSS 12 17 4.09P CISS 12 14 29.03P LS 14 30 0.30N CS 14 30 0.10P LD 17 20 0.85N CD 20 30 1.44P R_RC 16 17 35.73 C_RC 14 16 11.8P MOS 13 12 14 14 F1007MOS L=1.1U W=0.06 ;D G S B LEVEL1 JFET 17 14 13 F1007JF ;D G S DBODY 14 17 F1007DB ;P N .MODEL F1007MOS NMOS (VTO=3 KP=1.7E-5 LAMBDA=0.1 RD=0.28 RS=0.6) .MODEL F1007JF NJF (VTO=-6.8 BETA=0.2 LAMBDA=5) .MODEL F1007DB D (CJO=48P RS=0.25 VJ=0.7 M=0.35 BV=65) .ENDS *$ *POLYFET RF DEVICES *FEB 15TH 1994 *PHONE:(805)484-4210; FAX:(805)484-3393 CONTACT:MR. S.K. LEONG *HIGH POWER, HIGH FREQUENCY, RF N-CHANNEL VERTICAL DMOS MOSFET *TO GENERATE S PARAMETER MATCHING DATA SHEET, SET VG=3.63V FOR IDQ=400MA *MODEL APPLICABLE FOR ALL F1B 2 DIE IN AP AND AK PACKAGE. * NOTE:- HP/EESOF USES 'GATE DRAIN SOURCE' ORDER * ( ;D G S ) .SUBCKT F1008/PF 20 10 30 LG 10 11 1.26N RGATE 11 12 0.65 CG 10 30 0.01P CRSS 12 17 7.5P CISS 12 14 55.7P LS 14 30 0.15N CS 14 30 0.04P LD 17 20 0.95N CD 20 30 0.79P R_RC 16 17 17.4 C_RC 14 16 90P MOS 13 12 14 14 F1008MOS L=1.1U W=0.12 ;D G S B LEVEL1 JFET 17 14 13 F1008JF ;D G S DBODY 14 17 F1008DB ;P N .MODEL F1008MOS NMOS (VTO=3 KP=1.7E-5 LAMBDA=0.1 RD=0.14 RS=0.3) .MODEL F1008JF NJF (VTO=-6.8 BETA=0.2 LAMBDA=5) .MODEL F1008DB D (CJO=96P RS=0.25 VJ=0.7 M=0.35 BV=65) .ENDS *$ *POLYFET RF DEVICES *03/22/96 *PHONE:(805)484-4210; FAX:(805)3393 CONTACT: MR. S.K. LEONG *HIGH POWER, HIGH FREQUENCY, RF N-CHANNEL DMOS MOSFET *NOTE:-HP/EESOF USES 'GATE DRAIN SOURCE' ORDER * D G S .SUBCKT F1020/PF 20 10 30 LGATE 10 11 1.06N RGATE 11 12 0.53 CG 10 30 0.27P CRSS 12 17 21.90P CISS 12 14 200.00P LS 14 30 0.28N CS 14 30 1.07P LD 17 20 0.43N CD 20 30 0.58P R_RC 16 17 12.30 C_RC 14 16 59.40P MOS 13 12 14 14 F1020MOS L=1.1U W= 0.30 ;D G S B LEVEL1 JFET 17 14 13 F1020JF ;D G S DBODY 14 17 F1020DB ;P N .MODEL F1020MOS NMOS(VTO=2.7 KP=1.70E-5 LAMBDA=0.1 RD= 0.07 RS= 0.06) .MODEL F1020JF NJF (VTO=-6.8 BETA=0.2 LAMBDA=5) .MODEL F1020DB D (CJO=240.0P RS=0.25 VJ=0.7 M=0.35 BV= 65.0) .ENDS *$ *POLYFET RF DEVICES *FEB 15 1994 *PHONE:(805)484-4210; FAX:(805)494-3393 CONTACT:MR. S.K. LEONG *HIGH POWER, HIGH FREQUENCY, RF N-CHANNEL VERTICAL DMOS MOSFET *TO GENERATE S PARAMETER MATCHING DATA SHEET, SET VG=3.58V FOR IDQ=800MA * *MODEL APPLICABLE FOR ALL F1B 4 DIE IN AP AND AK PACKAGE. F1021 USE *BELOW AS EXAMPLE. * NOTE:- HP/EESOF USES 'GATE DRAIN SOURCE' ORDER * ( ;D G S ) .SUBCKT F1021/PF 20 10 30 LG 10 11 0.87N RGATE 11 12 0.61 CG 10 30 0.12P CRSS 12 17 14.2P CISS 12 14 130P LS 14 30 0.09N CS 14 30 0.06P LD 17 20 0.75N CD 20 30 0.45P R_RC 16 17 8.2 C_RC 14 16 61P MOS 13 12 14 14 F1021MOS L=1.1U W=0.24 ;D G S B LEVEL1 JFET 17 14 13 F1021JF ;D G S DBODY 14 17 F1021DB ;P N .MODEL F1021MOS NMOS (VTO=3 KP=1.7E-5 LAMBDA=0.1 RD=0.1 RS=0.09) .MODEL F1021JF NJF (VTO=-6.8 BETA=0.2 LAMBDA=5) .MODEL F1021DB D (CJO=192P RS=0.25 VJ=0.7 M=0.35 BV=65) .ENDS *$ *POLYFET RF DEVICES *FEB 15 1994 *PHONE:(805)484-4210; FAX:(805)484-3393 CONTACT:MR. S.K. LEONG *HIGH POWER, HIGH FREQUENCY, RF N-CHANNEL VERTICAL DMOS MOSFET *TO GENERATE S PARAMETER MATCHING DATA SHEET, SET VG=3.63V FOR IDQ=600MA *MODEL APPLICABLE FOR ALL F1B 3 DIE IN AP, AK, AQ AND CC PACKAGE. F1022 USE *BELOW AS EXAMPLE. * NOTE:- HP/EESOF USES 'GATE DRAIN SOURCE' ORDER * ( ;D G S ) .SUBCKT F1022/PF 20 10 30 LG 10 11 1.0N RGATE 11 12 0.39 CG 10 30 1.0P CRSS 12 17 10.9P CISS 12 14 84P LS 14 30 0.11N CS 14 30 2.0P LD 17 20 0.85N CD 20 30 1.12P R_RC 16 17 11.2 C_RC 14 16 80.0P MOS 13 12 14 14 F1022MOS L=1.1U W=0.18 ;D G S B LEVEL1 JFET 17 14 13 F1022JF ;D G S DBODY 14 17 F1022DB ;P N .MODEL F1022MOS NMOS (VTO=3 KP=1.7E-5 LAMBDA=0.1 RD=0.1 RS=0.17) .MODEL F1022JF NJF (VTO=-6.8 BETA=0.2 LAMBDA=5) .MODEL F1022DB D (CJO=144P RS=0.25 VJ=0.7 M=0.35 BV=65) .ENDS *$ *POLYFET RF DEVICES *OCT 2ND 1995 *PHONE:(805)484-4210; FAX:(805)484-3393 CONTACT:MR. S.K. LEONG *HIGH POWER, HIGH FREQUENCY, RF N-CHANNEL VERTICAL DMOS MOSFET *TO GENERATE S PARAMETER MATCHING DATA SHEET, SET VG=3.17V FOR IDQ=1200MA * NOTE:- HP/EESOF USES 'GATE DRAIN SOURCE' ORDER * ( ;D G S ) .SUBCKT F1027/PF 20 10 30 LG 10 11 0.64N RGATE 11 12 0.52 CG 10 30 1.72P CRSS 12 17 22.2P CISS 12 14 260P LS 14 30 0.22N CS 14 30 1.8P LD 17 20 0.29N CD 20 30 1.38P R_RC 16 17 16.9 C_RC 14 16 91.1P MOS 13 12 14 14 F1027MOS L=1.1U W=0.36 ;D G S B LEVEL1 JFET 17 14 13 F1027JF ;D G S DBODY 14 17 F1027DB ;P N .MODEL F1027MOS NMOS (VTO=2.6 KP=1.7E-5 LAMBDA=0.1 RD=0.06 RS=0.05) .MODEL F1027JF NJF (VTO=-6.8 BETA=0.2 LAMBDA=5) .MODEL F1027DB D (CJO=288P RS=0.25 VJ=0.7 M=0.35 BV=65) .ENDS *$ *POLYFET RF DEVICES *FEB 15 1994 *PHONE:(805)484-4210; FAX:(805)484-3393 CONTACT:MR. S.K. LEONG *HIGH POWER, HIGH FREQUENCY, RF N-CHANNEL VERTICAL DMOS MOSFET *TO GENERATE S PARAMETER MATCHING DATA SHEET, SET VG=3.63V FOR IDQ=600MA * NOTE:- HP/EESOF USES 'GATE DRAIN SOURCE' ORDER * ( ;D G S ) .SUBCKT F1072/PF 20 10 30 LG 10 11 1.0N RGATE 11 12 0.39 CG 10 30 1.0P CRSS 12 17 10.9P CISS 12 14 84P LS 14 30 0.11N CS 14 30 2.0P LD 17 20 0.85N CD 20 30 1.12P R_RC 16 17 11.2 C_RC 14 16 80.0P MOS 13 12 14 14 F1072MOS L=1.1U W=0.18 ;D G S B LEVEL1 JFET 17 14 13 F1072JF ;D G S DBODY 14 17 F1072DB ;P N .MODEL F1072MOS NMOS (VTO=3 KP=1.7E-5 LAMBDA=0.1 RD=0.1 RS=0.17) .MODEL F1072JF NJF (VTO=-6.8 BETA=0.2 LAMBDA=5) .MODEL F1072DB D (CJO=144P RS=0.25 VJ=0.7 M=0.35 BV=65) .ENDS *$ *POLYFET RF DEVICES *FEB 15 1994 *PHONE:(805)484-4210; FAX:(805)494-3393 CONTACT:MR. S.K. LEONG *HIGH POWER, HIGH FREQUENCY, RF N-CHANNEL VERTICAL DMOS MOSFET *TO GENERATE S PARAMETER MATCHING DATA SHEET, SET VG=3.58V FOR IDQ=800MA * NOTE:- HP/EESOF USES 'GATE DRAIN SOURCE' ORDER * ( ;D G S ) .SUBCKT F1074/PF 20 10 30 LG 10 11 0.87N RGATE 11 12 0.61 CG 10 30 0.12P CRSS 12 17 14.2P CISS 12 14 130P LS 14 30 0.09N CS 14 30 0.06P LD 17 20 0.75N CD 20 30 0.45P R_RC 16 17 8.2 C_RC 14 16 61P MOS 13 12 14 14 F1074MOS L=1.1U W=0.24 ;D G S B LEVEL1 JFET 17 14 13 F1074JF ;D G S DBODY 14 17 F1074DB ;P N .MODEL F1074MOS NMOS (VTO=3 KP=1.7E-5 LAMBDA=0.1 RD=0.1 RS=0.09) .MODEL F1074JF NJF (VTO=-6.8 BETA=0.2 LAMBDA=5) .MODEL F1074DB D (CJO=192P RS=0.25 VJ=0.7 M=0.35 BV=65) .ENDS *$ *POLYFET RF DEVICES *03/22/96 *PHONE:(805)484-4210; FAX:(805)3393 CONTACT: MR. S.K. LEONG *HIGH POWER, HIGH FREQUENCY, RF N-CHANNEL DMOS MOSFET *NOTE:-HP/EESOF USES 'GATE DRAIN SOURCE' ORDER * D G S .SUBCKT F1120/PF 20 10 30 LGATE 10 11 0.10N RGATE 11 12 1.20 CG 10 30 0.01P CRSS 12 17 21.20P CISS 12 14 207.00P LS 14 30 0.17N CS 14 30 2.30P LD 17 20 0.26N CD 20 30 0.01P R_RC 16 17 10.30 C_RC 14 16 83.70P MOS 13 12 14 14 F1120MOS L=1.1U W= 0.39 ;D G S B LEVEL1 JFET 17 14 13 F1120JF ;D G S DBODY 14 17 F1120DB ;P N .MODEL F1120MOS NMOS(VTO=3.0 KP=1.70E-5 LAMBDA=0.1 RD= 0.06 RS= 0.04) .MODEL F1120JF NJF (VTO=-6.8 BETA=0.2 LAMBDA=5) .MODEL F1120DB D (CJO=310.0P RS=0.25 VJ=0.7 M=0.35 BV= 65.0) .ENDS *$ *POLYFET RF DEVICES *03/22/96 *PHONE:(805)484-4210; FAX:(805)3393 CONTACT: MR. S.K. LEONG *HIGH POWER, HIGH FREQUENCY, RF N-CHANNEL DMOS MOSFET *NOTE:-HP/EESOF USES 'GATE DRAIN SOURCE' ORDER * D G S .SUBCKT F1174/PF 20 10 30 LGATE 10 11 0.57N RGATE 11 12 0.49 CG 10 30 0.01P CRSS 12 17 16.40P CISS 12 14 173.00P LS 14 30 0.21N CS 14 30 2.06P LD 17 20 0.37N CD 20 30 0.01P R_RC 16 17 11.10 C_RC 14 16 75.00P MOS 13 12 14 14 F1174MOS L=1.1U W= 0.33 ;D G S B LEVEL1 JFET 17 14 13 F1174JF ;D G S DBODY 14 17 F1174DB ;P N .MODEL F1174MOS NMOS(VTO=3.0 KP=1.70E-5 LAMBDA=0.1 RD= 0.07 RS= 0.06) .MODEL F1174JF NJF (VTO=-6.8 BETA=0.2 LAMBDA=5) .MODEL F1174DB D (CJO=248.0P RS=0.25 VJ=0.7 M=0.35 BV= 65.0) .ENDS *$ *POLYFET RF DEVICES *03/22/96 *PHONE:(805)484-4210; FAX:(805)3393 CONTACT: MR. S.K. LEONG *HIGH POWER, HIGH FREQUENCY, RF N-CHANNEL DMOS MOSFET *NOTE:-HP/EESOF USES 'GATE DRAIN SOURCE' ORDER * D G S .SUBCKT F1240/PF 20 10 30 LGATE 10 11 1.30N RGATE 11 12 0.76 CG 10 30 0.01P CRSS 12 17 26.50P CISS 12 14 111.00P LS 14 30 0.28N CS 14 30 3.20P LD 17 20 1.79N CD 20 30 0.01P R_RC 16 17 2.35 C_RC 14 16 2.50P MOS 13 12 14 14 F1240MOS L=1.1U W= 0.18 ;D G S B LEVEL1 JFET 17 14 13 F1240JF ;D G S DBODY 14 17 F1240DB ;P N .MODEL F1240MOS NMOS(VTO=3.0 KP=1.70E-5 LAMBDA=0.1 RD= 0.05 RS= 0.07) .MODEL F1240JF NJF (VTO=-6.8 BETA=0.2 LAMBDA=5) .MODEL F1240DB D (CJO=186.0P RS=0.25 VJ=0.7 M=0.35 BV= 40.0) .ENDS *$ *POLYFET RF DEVICES *03/22/96 *PHONE:(805)484-4210; FAX:(805)3393 CONTACT: MR. S.K. LEONG *HIGH POWER, HIGH FREQUENCY, RF N-CHANNEL DMOS MOSFET *NOTE:-HP/EESOF USES 'GATE DRAIN SOURCE' ORDER * D G S .SUBCKT F1260/PF 20 10 30 LGATE 10 11 0.52N RGATE 11 12 0.77 CG 10 30 0.02P CRSS 12 17 34.40P CISS 12 14 185.00P LS 14 30 0.08N CS 14 30 5.90P LD 17 20 0.62N CD 20 30 2.70P R_RC 16 17 4.80 C_RC 14 16 53.40P MOS 13 12 14 14 F1260MOS L=1.1U W= 0.24 ;D G S B LEVEL1 JFET 17 14 13 F1260JF ;D G S DBODY 14 17 F1260DB ;P N .MODEL F1260MOS NMOS(VTO=3.0 KP=1.70E-5 LAMBDA=0.1 RD= 0.03 RS= 0.06) .MODEL F1260JF NJF (VTO=-6.8 BETA=0.2 LAMBDA=5) .MODEL F1260DB D (CJO=248.0P RS=0.25 VJ=0.7 M=0.35 BV= 40.0) .ENDS *$ *POLYFET RF DEVICES *FEB 15 1994 *PHONE:(805)484-4210; FAX:(805)484-3393 CONTACT:MR. S.K. LEONG *HIGH POWER, HIGH FREQUENCY, RF N-CHANNEL VERTICAL DMOS MOSFET *TO GENERATE S PARAMETER MATCHING DATA SHEET, SET VG=3.55V FOR IDQ=200MA *MODEL APPLICABLE FOR ALL F2A 1 DIE IN AP, AK, AQ AND CC PACKAGE. * NOTE:- HP/EESOF USES 'GATE DRAIN SOURCE' ORDER * ( ;D G S ) .SUBCKT F2001/PF 20 10 30 LG 10 11 1.49N RGATE 11 12 2.17 CG 10 30 0.49P CRSS 12 17 1.06P CISS 12 14 9.04P LS 14 30 0.30N CS 14 30 0.24P LD 17 20 1.27N CD 20 30 1.27P R_RC 16 17 1079 C_RC 14 16 51.26P MOS 13 12 14 14 F2001MOS L=1.1U W=0.0125 ;D G S B LEVEL1 JFET 17 14 13 F2001JF ;D G S DBODY 14 17 F2001DB ;P N .MODEL F2001MOS NMOS (VTO=2 KP=1.5E-5 LAMBDA=0.1 RD=2.9 RS=1.7) .MODEL F2001JF NJF (VTO=-6.8 BETA=0.1 LAMBDA=5) .MODEL F2001DB D (CJO=12P RS=0.25 VJ=0.7 M=0.35 BV=65) .ENDS *$ *POLYFET RF DEVICES *FEB 15 1994 *PHONE:(805)484-4210; FAX:(805)484-3393 CONTACT:MR. S.K. LEONG *HIGH POWER, HIGH FREQUENCY, RF N-CHANNEL VERTICAL DMOS MOSFET *TO GENERATE S PARAMETER MATCHING DATA SHEET, SET VG=3.55V FOR IDQ=400MA *MODEL APPLICABLE FOR ALL F2A 2 DIE IN AP, AK, AND CC PACKAGE. * NOTE:- HP/EESOF USES 'GATE DRAIN SOURCE' ORDER * ( ;D G S ) .SUBCKT F2002/PF 20 10 30 LG 10 11 1.20N RGATE 11 12 1.02 CG 10 30 0.18P CRSS 12 17 2.80P CISS 12 14 19.32P LS 14 30 0.15N CS 14 30 2.48P LD 17 20 1.03N CD 20 30 0.28P R_RC 16 17 1073 C_RC 14 16 1.48P MOS 13 12 14 14 F2002MOS L=1.1U W=0.025 ;D G S B LEVEL1 JFET 17 14 13 F2002JF ;D G S DBODY 14 17 F2002DB ;P N .MODEL F2002MOS NMOS (VTO=2 KP=1.5E-5 LAMBDA=0.1 RD=1.1 RS=1.0) .MODEL F2002JF NJF (VTO=-6.8 BETA=0.1 LAMBDA=5) .MODEL F2002DB D (CJO=24P RS=0.25 VJ=0.7 M=0.35 BV=65) .ENDS *$ *POLYFET RF DEVICES *FEB 15 1994 *PHONE:(805)484-4210; FAX:(805)484-3393 CONTACT:MR. S.K. LEONG *HIGH POWER, HIGH FREQUENCY, RF N-CHANNEL VERTICAL DMOS MOSFET *TO GENERATE S PARAMETER MATCHING DATA SHEET, SET VG=3.55V FOR IDQ=800MA *MODEL APPLICABLE FOR ALL F2A 4 DIE IN AP AND AK PACKAGE. * NOTE:- HP/EESOF USES 'GATE DRAIN SOURCE' ORDER * ( ;D G S ) .SUBCKT F2012/PF 20 10 30 LG 10 11 0.85N RGATE 11 12 0.78 CG 10 30 0.10P CRSS 12 17 3.75P CISS 12 14 38.54P LS 14 30 0.10N CS 14 30 0.70P LD 17 20 0.88N CD 20 30 0.10P R_RC 16 17 28.8 C_RC 14 16 832.7P MOS 13 12 14 14 F2012MOS L=1.1U W=0.05 ;D G S B LEVEL1 JFET 17 14 13 F2012JF ;D G S DBODY 14 17 F2012DB ;P N .MODEL F2012MOS NMOS (VTO=2 KP=1.5E-5 LAMBDA=0.1 RD=0.6 RS=0.4) .MODEL F2012JF NJF (VTO=-6.8 BETA=0.1 LAMBDA=5) .MODEL F2012DB D (CJO=48P RS=0.25 VJ=0.7 M=0.35 BV=65) .ENDS *$ *POLYFET RF DEVICES *FEB 15 1994 *PHONE:(805)484-4210; FAX:(805)484-3393 CONTACT:MR. S.K. LEONG *HIGH POWER, HIGH FREQUENCY, RF N-CHANNEL VERTICAL DMOS MOSFET *TO GENERATE S PARAMETER MATCHING DATA SHEET, SET VG=3.55V FOR IDQ=600MA *MODEL APPLICABLE FOR ALL F2A 3 DIE IN AP AND AK PACKAGE. * NOTE:- HP/EESOF USES 'GATE DRAIN SOURCE' ORDER * ( ;D G S ) .SUBCKT F2021/PF 20 10 30 LG 10 11 1.12N RGATE 11 12 0.98 CG 10 30 0.01P CRSS 12 17 2.88P CISS 12 14 32.00P LS 14 30 0.13N CS 14 30 1.20P LD 17 20 0.89N CD 20 30 0.62P R_RC 16 17 1382 C_RC 14 16 32.6P MOS 13 12 14 14 F2021MOS L=1.1U W=0.0375 ;D G S B LEVEL1 JFET 17 14 13 F2021JF ;D G S DBODY 14 17 F2021DB ;P N .MODEL F2021MOS NMOS (VTO=2 KP=1.5E-5 LAMBDA=0.1 RD=0.7 RS=0.6) .MODEL F2021JF NJF (VTO=-6.8 BETA=0.1 LAMBDA=5) .MODEL F2021DB D (CJO=36P RS=0.25 VJ=0.7 M=0.35 BV=65) .ENDS *$ *POLYFET RF DEVICES *03/22/96 *PHONE:(805)484-4210; FAX:(805)3393 CONTACT: MR. S.K. LEONG *HIGH POWER, HIGH FREQUENCY, RF N-CHANNEL DMOS MOSFET *NOTE:-HP/EESOF USES 'GATE DRAIN SOURCE' ORDER * D G S .SUBCKT F2201S/PF 20 10 30 LGATE 10 11 1.90N RGATE 11 12 3.30 CG 10 30 0.88P CRSS 12 17 1.78P CISS 12 14 8.40P LS 14 30 0.05N CS 14 30 1.60P LD 17 20 1.50N CD 20 30 0.97P R_RC 16 17 680.00 C_RC 14 16 1.30P MOS 13 12 14 14 F2201SMOS L=1.1U W= 0.01 ;D G S B LEVEL1 JFET 17 14 13 F2201SJF ;D G S DBODY 14 17 F2201SDB ;P N .MODEL F2201SMOS NMOS(VTO=2.0 KP=1.50E-5 LAMBDA=0.1 RD= 1.10 RS= 1.05) .MODEL F2201SJF NJF (VTO=-6.8 BETA=0.2 LAMBDA=5) .MODEL F2201SDB D (CJO= 14.0P RS=0.25 VJ=0.7 M=0.35 BV= 40.0) .ENDS *$ *POLYFET RF DEVICES *03/22/96 *PHONE:(805)484-4210; FAX:(805)3393 CONTACT: MR. S.K. LEONG *HIGH POWER, HIGH FREQUENCY, RF N-CHANNEL DMOS MOSFET *NOTE:-HP/EESOF USES 'GATE DRAIN SOURCE' ORDER * D G S .SUBCKT F2202S/PF 20 10 30 LGATE 10 11 1.40N RGATE 11 12 0.80 CG 10 30 0.13P CRSS 12 17 3.45P CISS 12 14 14.78P LS 14 30 0.37N CS 14 30 4.01P LD 17 20 1.11N CD 20 30 0.74P R_RC 16 17 1123.0 C_RC 14 16 1.54P MOS 13 12 14 14 F2202SMOS L=1.1U W= 0.02 ;D G S B LEVEL1 JFET 17 14 13 F2202SJF ;D G S DBODY 14 17 F2202SDB ;P N .MODEL F2202SMOS NMOS(VTO=2.0 KP=1.30E-5 LAMBDA=0.1 RD= 0.40 RS= 0.65) .MODEL F2202SJF NJF (VTO=-6.8 BETA=0.2 LAMBDA=5) .MODEL F2202SDB D (CJO= 28.0P RS=0.25 VJ=0.7 M=0.35 BV= 40.0) .ENDS *$ *POLYFET RF DEVICES *03/22/96 *PHONE:(805)484-4210; FAX:(805)3393 CONTACT: MR. S.K. LEONG *HIGH POWER, HIGH FREQUENCY, RF N-CHANNEL DMOS MOSFET *NOTE:-HP/EESOF USES 'GATE DRAIN SOURCE' ORDER * D G S .SUBCKT L2081/PF 20 10 30 LGATE 10 11 0.01N RGATE 11 12 0.10 CG 10 30 0.50P CRSS 12 17 2.10P CISS 12 14 26.70P LS 14 30 0.11N CS 14 30 0.51P LD 17 20 0.36N CD 20 30 0.16P R_RC 16 17 532.00 C_RC 14 16 5.80P MOS 13 12 14 14 L2081MOS L=1.1U W= 0.04 ;D G S B LEVEL1 JFET 17 14 13 L2081JF ;D G S DBODY 14 17 L2081DB ;P N .MODEL L2081MOS NMOS(VTO=2.5 KP=1.25E-5 LAMBDA=0.1 RD= 0.20 RS= 0.60) .MODEL L2081JF NJF (VTO=-6.8 BETA=0.2 LAMBDA=5) .MODEL L2081DB D (CJO= 95.0P RS=0.25 VJ=0.7 M=0.35 BV= 65.0) .ENDS *$ *POLYFET RF DEVICES *03/22/96 *PHONE:(805)484-4210; FAX:(805)3393 CONTACT: MR. S.K. LEONG *HIGH POWER, HIGH FREQUENCY, RF N-CHANNEL DMOS MOSFET *NOTE:-HP/EESOF USES 'GATE DRAIN SOURCE' ORDER * D G S .SUBCKT L2082/PF 20 10 30 LGATE 10 11 0.10N RGATE 11 12 0.60 CG 10 30 0.24P CRSS 12 17 2.17P CISS 12 14 60.00P LS 14 30 0.05N CS 14 30 0.10P LD 17 20 0.10N CD 20 30 1.30P R_RC 16 17 7.54 C_RC 14 16 10.30P MOS 13 12 14 14 L2082MOS L=1.1U W= 0.08 ;D G S B LEVEL1 JFET 17 14 13 L2082JF ;D G S DBODY 14 17 L2082DB ;P N .MODEL L2082MOS NMOS(VTO=2.5 KP=1.25E-5 LAMBDA=0.1 RD= 0.17 RS= 0.30) .MODEL L2082JF NJF (VTO=-6.8 BETA=0.2 LAMBDA=5) .MODEL L2082DB D (CJO=190.0P RS=0.25 VJ=0.7 M=0.35 BV= 65.0) .ENDS *$ *POLYFET RF DEVICES *03/22/96 *PHONE:(805)484-4210; FAX:(805)3393 CONTACT: MR. S.K. LEONG *HIGH POWER, HIGH FREQUENCY, RF N-CHANNEL DMOS MOSFET *NOTE:-HP/EESOF USES 'GATE DRAIN SOURCE' ORDER * D G S .SUBCKT L2083/PF 20 10 30 LGATE 10 11 0.02N RGATE 11 12 0.14 CG 10 30 0.21P CRSS 12 17 4.14P CISS 12 14 82.20P LS 14 30 0.01N CS 14 30 0.32P LD 17 20 0.10N CD 20 30 2.97P R_RC 16 17 44.00 C_RC 14 16 10.30P MOS 13 12 14 14 L2083MOS L=1.1U W= 0.12 ;D G S B LEVEL1 JFET 17 14 13 L2083JF ;D G S DBODY 14 17 L2083DB ;P N .MODEL L2083MOS NMOS(VTO=2.5 KP=1.25E-5 LAMBDA=0.1 RD= 0.07 RS= 0.15) .MODEL L2083JF NJF (VTO=-6.8 BETA=0.2 LAMBDA=5) .MODEL L2083DB D (CJO=285.0P RS=0.25 VJ=0.7 M=0.35 BV= 65.0) .ENDS *$ *POLYFET RF DEVICES *03/22/96 *PHONE:(805)484-4210; FAX:(805)3393 CONTACT: MR. S.K. LEONG *HIGH POWER, HIGH FREQUENCY, RF N-CHANNEL DMOS MOSFET *NOTE:-HP/EESOF USES 'GATE DRAIN SOURCE' ORDER * D G S .SUBCKT P123/PF 20 10 30 LGATE 10 11 1.20N RGATE 11 12 0.56 CG 10 30 0.08P CRSS 12 17 1.90P CISS 12 14 8.50P LS 14 30 0.44N CS 14 30 6.60P LD 17 20 0.50N CD 20 30 3.00P R_RC 16 17 744.00 C_RC 14 16 2.20P MOS 13 12 14 14 P123MOS L=1.1U W= 0.01 ;D G S B LEVEL1 JFET 17 14 13 P123JF ;D G S DBODY 14 17 P123DB ;P N .MODEL P123MOS NMOS(VTO=2.0 KP=1.50E-5 LAMBDA=0.1 RD= 1.10 RS= 1.05) .MODEL P123JF NJF (VTO=-6.8 BETA=0.2 LAMBDA=5) .MODEL P123DB D (CJO= 14.0P RS=0.25 VJ=0.7 M=0.35 BV= 40.0) .ENDS *$